CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1768BA3
Spec. No. : C304A3-B Issued Date :...
CYStech Electronics Corp.
General Purpose
NPN Epitaxial Planar
Transistor
BTD1768BA3
Spec. No. : C304A3-B Issued Date : 2006.08.21 Revised Date :2010.07.02 Page No. : 1/6
Description
The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application.
Features
Low collector saturation voltage High breakdown voltage, VCEO=80V (min.) High collector current, IC(max)=1A (DC) Pb-free package
Symbol
BTD1768BA3
Outline
TO-92
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PD RθJA
Tj
Tstg
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
BTD1768BA3
E BC
Limits
100 80 5 1 2 (Note) 750 167
150
-55~+150
Unit
V V V A A mW
°C/W °C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304A3-B Issued Date : 2006.08.21 Revised Date :2010.07.02 Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(SAT) *hFE fT Cob
Min.
100 80 5 120 -
Typ.
0.15 100 20
Max.
1 1 0.4 560 -
Unit
V V V μA μA V MHz pF
Test Conditions
IC=50μA IC=1mA IE=50μA VCB=80V, IE=0 VEB=4V, IC=0 IC=500mA, IB=20mA VCE=3V, IC=100mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank...
