BTD1664M3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1664M3 BVCEO IC RCESAT Spec. No. : C223M3 Issued Date : 2003.05.26 Revised Date :2013.08.07 Page No. : 1/8 25V 1.5A 0.31Ω(typ.) Features The BTD1664M3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA Complementary to BTB1132M3 Pb-free lead plating and halogen-free package Symbol BTD1664M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature and Storage Temperature Range Note : 1. Single pulse, Pw = 20ms, duty ≤ 2%. 2. When mounted on a 40 ×40 ×0.7 mm ceramic board. Symbol VCBO VCEO VEBO IC ICP PD Tj ; Tstg Limits 45 25 5 1.5 3 (Note 1) 0.5 2 (Note 2) -55~+150 Unit V V V A A W W °C BTD1664M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223M3 Issued Date : 2003.05.26 Revised Date :2013.08.07 Page No. : 2/8 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *RCE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. 45 25 5 - - 100 120 80 - Typ. 0.15 0.2 0.25 0.31 150 15 Max. 100 100 0.3 0.4 0.5 0.62 1 390 - Unit V V V nA nA V V V Ω V MHz pF Test Conditions IC=10μA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCB=40V. IE=0 VEB=4V,IC=0 IC=400mA, IB=2...