BTC5103I3

CYStech Electronics Corp. High Speed Switching Transistor Spec. No. : C651I3 www.DataSheet4U.com Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 1/5 BTC5103I3 Features Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A High Switching Speed Wide SOA Complementary to BTA1952I3 RoHS compliant package BVCEO IC RCESAT 60V 5A 110mΩ Symbol BTC5103I3 Outline TO-251 B：Base C：Collector E：Emitter B C CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 100 60 6 5 9 *1 1 30 *2 150 -55~+150 Unit V V V A W °C °C Note : *1. Single Pulse Pw=100ms *2. Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger BTC5103I3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Cob Min. 100 60 6 82 30 Typ. 0.33 30 80 Max. 10 10 0.4 1.2 270 Unit V V V μA μA V V MHz pF Spec. No. : C651I3 www.DataSheet4U.com Issued Date : 2005.10.05 Revised Date :2009.02.04 Page No. : 2/5 Test Conditions IC=1mA, IE=0 IC=1mA, IB=0 IE=1mA, IC=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=2V, IC=1A VCE=2V, IC=3A VCE=5V, IC=1A, f=30MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380us, D...