BTC3906L3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C208L3 www.DataSheet4U.com Issued Date : 2004.09.21 Revised Date : 2006.12.26 Page No. : 1/5 BTC3906L3 Description The BTC3906L3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) Complement to BTA1514L3 Pb-free package Symbol BTC3906L3 Outline SOT-223 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation@TC=25℃ Junction Temperature Storage Temperature BTC3906L3 Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 5 150 -55~+150 Unit V V V mA W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 180 160 6 100 100 40 120 100 Typ. 0.1 Max. 50 50 0.15 0.2. 1 1 390 6 Unit V V V nA nA V V V V MHz pF Spec. No. : C208L3 www.DataSheet4U.com Issued Date : 2004.09.21 Revised Date : 2006.12.26 Page No. : 2/5 Test Conditions IC=100μA IC=1mA IE=10μA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=6V, IC=2mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hF...