BTB772SA3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C817A3-R Issued Date : 2003.05.31 Revised Date:2006.05.15 Page:1/4 BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.1A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free package Symbol BTB772SA3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd Tj Tstg Limit -50 -50 -5 -3 -7 (Note) 750 150 -55~+150 Unit V V V A A mW °C °C BTB772SA3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. -50 -50 -5 100 160 160 100 Typ. -0.3 -1 80 55 Max. -1 -1 -1 -0.3 -0.5 -2 500 Unit V V V μA μA μA V V V MHz pF www.DataSheet4U.com Spec. No. : C817A3-R Issued Date : 2003.05.31 Revised Date:2006.05.15 Page:2/4 Test Conditions IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-40V, IE=0 VCE=-30V, IB=0 VEB=-5V, IC=0 IC=-400mA, IB=-20mA IC=-2A, IB=-0.1A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classi...