CYStech Electronics Corp.
Low Saturation PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C314N3 Issued ...
CYStech Electronics Corp.
Low Saturation
PNP Epitaxial Planar
Transistor
www.DataSheet4U.com Spec. No. : C314N3 Issued Date : 2005.04.20 Revised Date : Page No. : 1/ 5
BTB1197N3
Description
The BTB1197N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous.
Features
Low VCE(SAT) , VCE(SAT)≤ -0.3V (IC / IB=-1A/-100mA) Large collector current, IC=-1A Complementary to BTD1781N3. Pb-free package
Symbol
BTB1197N3
Outline
SOT-23
B：Base C：Collector E：Emitter
BTB1197N3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg
www.DataSheet4U.com Spec. No. : C314N3 Issued Date : 2005.04.20 Revised Date : Page No. : 2/ 5
Limits -50 -32 -5 -1 -2 310 (Note 1) 500 (Note 2) 403 (Note 1) 250 (Note 2) -55~+150 -55~+150
Unit V V V A mW °C/W °C °C
Note: 1.Device mounted on FR-4 PCB with minimum pad 2.Device mounted on FR-4 PCB with area of 4.5”×5”, mounting pad 0.02 in² of 2 oz copper
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 *hFE 4 fT Cob Min. -40 -32 -5 180 100 80 30 100 Typ. 200 12 Max. -100 -100 -0.25 -0.30 -0.65 -1.2 -1.1 4...
