BTA1579S3

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C307S3 Issued Date : 2003.06.27 Revised Date : Page No. : 1/4 BTA1579S3 Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -120V Complementary to BTC4102S3. Symbol BTA1579S3 Outline SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits -120 -120 -5 -50 200 625 150 -55~+150 Unit V V V mA mW °C/W °C °C BTA1579S3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) hFE fT Cob Min. -120 -120 -5 56 Typ. 140 3.2 Max. -500 -500 -0.5 390 Unit V V V nA nA V MHz pF www.DataSheet4U.com Spec. No. : C307S3 Issued Date : 2003.06.27 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-100V VEB=-4V IC=-10mA, IB=-1mA VCE=-6V, IC=-2mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range K 56~120 P 82~180 Q 120~270 R 180~390 BTA1579S3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=5V www.DataSh...