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SSF3641 Dataheets PDF



Part Number SSF3641
Manufacturers Silikron Semiconductor Co
Logo Silikron Semiconductor Co
Description PWM applications
Datasheet SSF3641 DatasheetSSF3641 Datasheet (PDF)

SSF3641 www.DataSheet4U.com DESCRIPTION The SSF3641 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS =- 30V,ID =-5A RDS(ON) < 64mΩ @ VGS=-4.5V RDS(ON) < 49mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power man.

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SSF3641 www.DataSheet4U.com DESCRIPTION The SSF3641 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS =- 30V,ID =-5A RDS(ON) < 64mΩ @ VGS=-4.5V RDS(ON) < 49mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking SSF3641 Device SSF3641 Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Limit -30 ±12 -5 -4.2 -30 2.0 -55 To 150 Unit V V A A A W ℃ VDS VGS ID(25℃) ID(70℃) IDM PD TJ,TSTG Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Min -30 Typ Max Unit V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF3641 www.DataSheet4U.com Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IDSS IGSS VDS=-24V,VGS=0V VGS=±12V,VDS=0V -1 ±100 μA nA VGS(th) RDS(ON) gFS VDS=VGS,ID=-250uA VGS=-4.5V, ID=-4A VGS=-10V, ID=-5A VDS=-5V,ID=-5A -0.7 53 41 5 -1.3 64 49 V mΩ mΩ S Clss Coss Crss VDS=-15V,VGS=0V, F=1.0MHz 950 100 75 PF PF PF td(on) tr td(off) tf Qg Qgs Qgd VDS=-15V,ID=-5A,VGS=-4.5V VDS=-15V,VGS=-10V,RGEN=3Ω 12 5 36 11 9 2 3 nS nS nS nS nC nC nC VSD VGS=0V,IS=-1A -0.75 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF3641 www.DataSheet4U.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS td(on) ton tr 90% td(off) toff tf 90% VOUT 10% INVERTED 10% 90% VIN 10% 50% 50% PULSE WIDTH Figure 1: Switching Test Circuit Figure 2:Switching Waveforms TJ-Junction Temperature(℃) -ID- Drain Current (A) PD Power(W) TJ-Junction Temperature(℃) Figure 3 Power Dissipation Figure 4 Drain Current Rdson On-Resistance(mΩ) -ID- Drain Current (A) -Vds Drain-Source Voltage (V) -ID- Drain Current (A) Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.0 SSF3641 www.DataSheet4U.com -Vgs Gate-Source Voltage (V) Normalized On-Resistance -ID- Drain Current (A) TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance Rdson On-Resistance(mΩ) -Vgs Gate-Source Voltage (V) C Capacitance (pF) -Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds -Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) -Is- Reverse Drain Current (A) -Vsd Source-Drain Voltage (V) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com v1.0 ©Silikron Semiconductor CO.,LTD. SSF3641 www.DataSheet4U.com -ID- Drain Current (A) -Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area ZthJA Normalized Transient Thermal Resistance Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.0 SSF3641 www.DataSheet4U.com SOP-8 PACKAGE INFORMATION NOTES: 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 6 http://www.silikron.com v1.0 SSF3641 www.DataSheet4U.com ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your .


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