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SSF3324

Silikron Semiconductor Co

MOSFET

SSF3324 www.DataSheet4U.com DESCRIPTION The SSF3324 uses advanced trench technology to provide excellent RDS(ON) and lo...


Silikron Semiconductor Co

SSF3324

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Description
SSF3324 www.DataSheet4U.com DESCRIPTION The SSF3324 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =5.8A RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 30mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 3324 Device SSF3324 Device Package SOT-23 Reel Size Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 30 ±12 5.8 30 1.4 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 90 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=24V,VGS=0V Min 30 Typ Max Unit V 1 μA ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF3324 www.DataSheet4U.com Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold ...




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