Battery protection
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SSF2418E
DESCRIPTION
The SSF2418E uses advanced trench technology to provide excellent RDS(ON), lo...
Description
www.DataSheet4U.com
SSF2418E
DESCRIPTION
The SSF2418E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch. It is ESD protected.
GENERAL FEATURES
● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating:2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●Battery protection ●Load switch ●Power management SOT23-6 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking 2418E Device SSF2418E Device Package SOT23-6 Reel Size Ø330mm Tape width 12mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
Limit
20 ±12 6 30 1.3 -55 To 150
Unit
V V A A W ℃
VDS VGS ID IDM PD TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 95 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
Min
20
Typ
Max
Unit
V
©Silikron Semiconductor CO.,LTD.
1
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SSF2418E
1 ±10 μA uA
...
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