SSF2318E

www.DataSheet4U.com SSF2318E DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2318E Device SSF2318E Device Package SOT-23 Reel Size Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 20 ±8 6.5 30 1.4 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 90 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min 20 Typ Max Unit V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 www.DataSheet4U.com SSF2318E 1 ±1 ±10 μA uA uA Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate T...