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SSF2302

Silikron Semiconductor Co

Battery protection

www.DataSheet4U.com SSF2302 DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low ...


Silikron Semiconductor Co

SSF2302

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Description
www.DataSheet4U.com SSF2302 DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G D S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 2.4A RDS(ON) < 115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package 3 D 2302 G 1 2 S Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2302 Device SSF2302 Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID (25℃) ID (70℃) Drain Current-Continuous@ Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 20 ±8 2.4 1.7 10 0.9 -55 To 150 Unit V V A A A W ℃ 140 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA BVDSS IDSS IGSS VGS=0V ID=250μA V...




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