20V Dual P-Channel MOSFET
TSM6981D
20V Dual P-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
40 @ VGS = -4.5V -20 50 @ VGS = -2.5V 60 @ VGS = ...
Description
TSM6981D
20V Dual P-Channel MOSFET
PRODUCT SUMMARY VDS (V) RDS(on)(mΩ)
40 @ VGS = -4.5V -20 50 @ VGS = -2.5V 60 @ VGS = -1.8V
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TSSOP-8
Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2
ID (A)
-5 -4 -3
Features
● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● ● Load Switch PA Switch
Ordering Information
Part No.
TSM6981DCA RF
Package
TSSOP-8
Packing
T&R Dual P-Channel MOSFET
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range
a,b o o
Symbol
VDS VGS ID IDM IS
PD
Limit
-20 ±8 -5 -30 -1.0
Unit
V V A A A W
o o
Ta = 25 C Ta = 70 C
1.14 0.73
+150 - 55 to +150
TJ TJ, TSTG
C C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
Symbol
RӨJF RӨJA
Limit
40 75
Unit
o o
C/W C/W
1/6
Version: A07
TSM6981D
20V Dual P-Channel MOSFET
Electrical Specifications
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage O...
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