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TSM6866D Dataheets PDF



Part Number TSM6866D
Manufacturers Taiwan Semiconductor Company
Logo Taiwan Semiconductor Company
Description 20V Dual N-Channel MOSFET w/ESD Protected
Datasheet TSM6866D DatasheetTSM6866D Datasheet (PDF)

TSM6866D Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain www.DataSheet4U.com 20V Dual N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =28mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =40mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Order.

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TSM6866D Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain www.DataSheet4U.com 20V Dual N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =28mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =40mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM6968DCA Packing Tape & Reel 3,000/per reel Package TSSOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 oC Ta = 70 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG Symbol VDS VGS ID IDM PD Limit 20V ± 12 6.5 30 1.5 0.96 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec. Symbol Rθjf Rθja Limit 35 83 Unit o o C/W C/W TSM6866D 1-1 2003/12 rev. A www.DataSheet4U.com Electrical Characteristics Rate ID = 6.5A, (Ta = 25 oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Body Leakage On-State Drain Current Forward Transconductance Conditions VGS = 0V, ID = 250uA VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VDS = VGS, ID = 250uA VDS = 20V, VGS = 0V VGS = ± 4.5V, VDS = 0V VGS = ± 12V, VDS = 0V VGS = 4.5V, VDS >= 5V VDS = 10V, ID = 6.5A VDS = 10V, ID = 6.5A, VGS = 4.5V VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω VDS = 10V, VGS = 0V, f = 1.0MHz Symbol BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS IGSS ID(ON) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS Min 20 --0.5 ---30 -------------- Typ -22 30 1.0 ----40 12 2 3.5 75 125 600 300 870 320 240 -0.7 Max -28 40 -10 ± 100 ± 10 -----100 150 720 360 ---1.0 1.2 Unit V mΩ V uA nA mA A S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.0A, VGS = 0V A V VSD nC nS pF Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM6866D 2-2 2003/12 rev. A www.DataSheet4U.com Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM6866D 3-3 2003/12 rev. A www.DataSheet4U.com TSSOP-8 Mechanical Drawing DIM A a B C D E e F L TSSOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.20 6.60 0.244 0.260 4.30 4.50 0.170 0.177 2.90 3.10 0.114 0.122 0.65 (typ) 0.025 (typ) 0.25 0.30 0.010 0.019 1.0.


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