Document
TSM6866D
Pin assignment: 1. Drain 2. Source 1 3. Source 1 4. Gate 1 5, Gate 2 6. Source 2 7, Source 2 8. Drain
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20V Dual N-Channel MOSFET w/ESD Protected
VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6.5A =28mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.5A =40mΩ
Features
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application
Block Diagram
Ordering Information
Part No. TSM6968DCA Packing Tape & Reel 3,000/per reel Package TSSOP-8
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 oC Ta = 70 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG
Symbol
VDS VGS ID IDM PD
Limit
20V ± 12 6.5 30 1.5 0.96 +150 - 55 to +150
Unit
V V A A W
o o
C C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec.
Symbol
Rθjf Rθja
Limit
35 83
Unit
o o
C/W C/W
TSM6866D
1-1
2003/12 rev. A
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Electrical Characteristics
Rate ID = 6.5A, (Ta = 25 oC unless otherwise noted)
Parameter Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Body Leakage On-State Drain Current Forward Transconductance
Conditions
VGS = 0V, ID = 250uA VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VDS = VGS, ID = 250uA VDS = 20V, VGS = 0V VGS = ± 4.5V, VDS = 0V VGS = ± 12V, VDS = 0V VGS = 4.5V, VDS >= 5V VDS = 10V, ID = 6.5A VDS = 10V, ID = 6.5A, VGS = 4.5V VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω VDS = 10V, VGS = 0V, f = 1.0MHz
Symbol
BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS IGSS ID(ON) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS
Min
20 --0.5 ---30 --------------
Typ
-22 30 1.0 ----40 12 2 3.5 75 125 600 300 870 320 240 -0.7
Max
-28 40 -10 ± 100 ± 10 -----100 150 720 360 ---1.0 1.2
Unit
V mΩ V uA nA mA A S
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.0A, VGS = 0V A V VSD nC
nS
pF
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM6866D
2-2
2003/12 rev. A
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Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
TSM6866D
3-3
2003/12 rev. A
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TSSOP-8 Mechanical Drawing
DIM A a B C D E e F L
TSSOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.20 6.60 0.244 0.260 4.30 4.50 0.170 0.177 2.90 3.10 0.114 0.122 0.65 (typ) 0.025 (typ) 0.25 0.30 0.010 0.019 1.0.