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Provisional Data Sheet No. PD-9.1392
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AVALANCHE ENERGY AND dv/dt RATED
IRH9250
P-CHANNEL
HEXFET® TRANSISTOR
RAD HARD
-200 Volt, 0.315Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the PChannel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inver ters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Product Summary
Part Number IRH9250 BVDSS -200V RDS(on) 0.315Ω ID -14A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C I D @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
Notes: See page 4
Pre-Radiation
IRH9250
-14 -9 -56 150 1.2 ±20 500 -14 15 -5.5 -55 to 150
oC
Units A
W W/K
V mJ A mJ V/ns
300 (0.063 in. (1 .6mm) from case for 10s) 11.5 (typical)
g
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Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min.
-200 — — — -2.0 4.0 — — — — — — — — — — — —
Typ. Max. Units
— -0.10 — — — — — — — — — — — — — — — 8.7 — — 0.315 0.33 -4.0 — -25 -250 -100 100 200 45 85 60 240 225 175 — V V/°C Ω V S( ) µA nA nC Ω
Test Conditions
VGS = 0V, ID = -1.0 mA Reference to 25°C, ID = -1.0 mA VGS = -12V, ID = -9A VGS = -12V, ID = -14A VDS = VGS, ID = -1.0 mA VDS > -15V, IDS = -9A VDS = 0.8 x Max. Rating,VGS = 0V VDS = 0.8 x Max. Rating VGS = 0V, TJ = 125°C VGS = - 20V VGS = 20V VGS = -12V, ID = -14A VDS = Max. Rating x 0.5 VDD = -50V, ID = -14A, RG = 2.35Ω
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
ns
Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
Modified MOSFET symbol showing the internal inductances.
LS
Internal Source Inductance
—
8.7
—
nH
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
1100 310 55
— — —
pF
VGS = 0V, VDS = -25V f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM VSD t rr Q RR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
— — — — -14 -56
Test Conditions
Modified MOSFET symbol showing the integral Reverse p-n junction rectifier.
A
— — -3.6 V Tj = 25°C, IS = -14A, VGS = 0V — — 740 ns Tj = 25°C, IF = -14A, di/dt ≤ -100 A/µs — — 7.0 µC VDD ≤ -14V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA RthCS Junction-to-Case Ju.