M65608E

www.DataSheet4U.com Features Operating Voltage: 5V Access Time: 30, 45 ns Very Low Power Consumption – Active: 600 mW (Max) – Standby: 1 µW (Typ) Wide Temperature Range: -55⋅C to +125⋅C 400 Mils Width Packages: FP32 and SB32 TTL Compatible Inputs and Outputs Asynchronous No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019 QML Q and V with SMD 5962-89598 ESCC with Specification 9301/047 Description The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Utilizing an array of six transistors (6T) memory cells, the M65608E combines an extremely low standby supply current (Typical value = 0.2 µA) with a fast access time at 30 ns over the full military temperature range. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The M65608E is processed according to the methods of the latest revision of the MIL PRF 38535 or ESCC 9000. Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM M65608E www.DataSheet4U.com Block Diagram Pin Configuration 32-lead DIL side-brazed 32-lead Flatpack 400 MILS 400 MILS 2 M65608E 4151N–AERO–04/09 M65608E www.DataSheet4U.com Pin Description Table 1. Pin Names Names A0 - A16 I/O0 - I/O7 CS1 CS2 WE OE VCC GND Description Address inputs Data Input/Output Chip select 1 Chip select 2 Write Enable Output Enable Power Ground Table 2. Truth Table CS1 H CS2 X W X OE X Inp...