Single P-Channel 1.8V Specified MicroSURF MOSFET
TSM8405P
www.DataSheet4U.com
Single P-Channel 1.8V Specified MicroSURFTM MOSFET
Lateral Power™ for Load Switching and ...
Description
TSM8405P
www.DataSheet4U.com
Single P-Channel 1.8V Specified MicroSURFTM MOSFET
Lateral Power™ for Load Switching and PA Switch
VDS = - 12V RDS (on), Vgs @ - 4.5V, Ids @ - 4.9A = 50mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ
D
S
D
S
S
D
G
G
Patent Pending Description
Bump Side View
TSM8405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit.
Features
Low profile package: less than 0.8mm height when mounted on PCB Occupies only 2.25mm of PCB area
2
Less than 25% of the area of a SSOT-6 Excellent thermal and electrical capabilities Lead free solder bumps available
Block Diagram
Ordering Information
Part No. TSM8405P Packing Tape & Reel Q’ty 3kpcs / 7”
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation (Steady State) Operating Junction Temperature Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM PD TJ TJ, TSTG
Limit
- 12V ±8 - 4.9 - 10 1. 5 +150 - 55 to +150
Unit
V V A A W
o o
C C
Thermal Performance
Parameter
Junction to Ambient Thermal Resistance Junction to Balls Thermal Resistance
Symbol
Rθja RθjR
Limit
85 12
Unit
o o
C/W C/W
TSM8405P
1-1
2003/10 rev. G
www.DataSheet4U.com
Electrical Characteris...
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