Document
TSM4N60
600V N-Channel Power MOSFET
TO-220 ITO-220
TO-251 (IPAK)
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 2.5 @ VGS =10V
ID (A)
2
General Description
The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts base on half bridge topology.
Features
● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
Block Diagram
Ordering Information
Part No.
Package
TSM4N60CZ C0
TO-220
TSM4N60CZ C0G
TO-220
TSM4N60CI C0
ITO-220
TSM4N60CI C0G
ITO-220
TSM4N60CH C5
TO-251
TSM4N60CH C5G
TO-251
TSM4N.