TSM4835

TSM4835 Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain www.DataSheet4U.com 30V P-Channel Enhancement Mode MOSFET VDS = - 30V RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18mΩ RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ Features — — — Advanced trench process technology High density cell design for ultra low on-resistance High gate voltage Block Diagram Ordering Information Part No. TSM4835CS Packing Tape & Reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 C Ta > 25 oC Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o Symbol VDS VGS ID IDM PD Limit - 30 ± 25 - 9.5 - 50 2.5 1.6 +150 - 55 to +150 Unit V V A A W W o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol Rθja Limit 50 Unit o C/W TSM4835 1-5 2003/12 rev. A www.DataSheet4U.com Electrical Characteristics Ta = 25 C, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit o Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance VGS = 0V, ID = - 250uA VGS = - 10V, ID = -9.5A VGS = - 4.5V, ID = -7.5A VDS =...