TSM4410D

TSM4410D www.DataSheet4U.com 25V Dual N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 25 15 @ VGS = 10V 21 @ VGS = 4.5V SOP-8 Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5, 6, 7, 8. Drain ID (A) 10 8 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch Dc-DC Converters and Motors Drivers Ordering Information Part No. TSM4410DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 70 C Limit 25 ±20 25 50 2.3 2 1.3 +150 -55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Maximum DC current limited by the package b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec. Symbol RӨJC RӨJA Limit 30 50 Unit o o C/W C/W 1/6 Version: A07 TSM4410D www.DataSheet4U.com 25V Dual N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current ...