TSM414K34

Preliminary TSM414K34 www.DataSheet4U.com 30V N-Channel MOSFET with Schottky Diode SOP-8 Pin Definition: 1. Anode 8. Cathode 2. Anode 7. Cathode 3. Source 6. Drain 4. Gate 5. Drain MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 55 @ VGS = 10V 65 @ VGS = 4.5V ID (A) 4 2 SCHOTTKY PRODUCT SUMMARY VRRM (V) VF (V) 30 0.51 IF (A) 3 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM414K34CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET with Schottky Diode MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS Pulsed Drain Current, a,b Continuous Source Current (Diode Conduction) o Maximum Power Dissipation @ Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD Limit 30 ±20 4 20 4 2 +150 -55 ~ +150 Unit V V A A A W o o TJ TJ, TSTG C C Schottky Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Drain-Source Voltage Average Forward Current Non-Peak Repetitive Surge Current c VRRM IF IFSM 30 3 20 o V A A Thermal Performance Junction to Ambient Thermal Resistance RӨJA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 10 sec. C. Surge Applied at Rated Load Conditions, Half-Wave, Sing...