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TSM3457
30V P-Channel MOSFET
Description
TSM3457 30V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 60 100 Qg 9.52 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Ordering Information...
Taiwan Semiconductor Company
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