TSM2N7000K

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: 1. Source 2. Gate 3. Drain www.DataSheet4U.com PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 60 5 @ VGS = 10V 5.5 @ VGS = 5V ID (mA) 100 100 Features ● ● ● ● Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Block Diagram Ordering Information Part No. TSM2N7000KCT B0 TSM2N7000KCT A3 Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous @ TA=25ºC Pulsed Continuous @ TA=25ºC Pulsed Symbol VDS VGS ID IDM IDR IDMR PD TJ TJ, TSTG Limit 60 ±20 300 700 300 700 400 +150 -55 to +150 Unit V V mA Drain Reverse Current Maximum Power Dissipation Operating Junction Temperature mA mW o o C C Operating Junction and Storage Temperature Range Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol TL RӨJA Limit 10 357 Unit S ºC/W 1/5 Version: A09 TSM2N7000K 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b www.DataSheet4U.com Conditions VGS = ...