TSM1N45

450V N-Channel Power MOSFET TO-92 Pin Definition: 1. Gate 2. Drain 3. Source www.DataSheet4U.com TSM1N45 PRODUCT SUMMARY VDS (V) 450 RDS(on)(Ω) 4.25 @ VGS =10V ID (A) 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energy pulse in the avalanche and commutation mode. There devices are well suited for electronic ballasts base and half bridge configuration. Features ● ● ● ● ● Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±30V guaranteed Block Diagram Ordering Information Part No. TSM1N45CT B0 TSM1N45CT A3 Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Drain to Source Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation @TC =25ºC Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM EAS IAR EAR dv/dt PDTOT TJ, TSTG Limit 450 ±30 0.5 4 108 0.5 0.25 5.5 2 -55 to +150 Unit V V A A mJ A mJ V/ns o W C Thermal Performance Parameter T...