TSB1132

TSB1132 Low Frequency PNP Transistor Pin assignment: 1. Base 2. Collector 3. Emitter www.DataSheet4U.com BVCEO = - 32V Ic = - 1A VCE (SAT), =- 0.15V(typ.) @Ic / Ib =- 0.5A /- 50mA Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSB1132CY Packing Tape & Reel Package SOT-89 Marking BK Structure Epitaxial planar type. PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 10mS, Duty <= 50% 2. When mounted on a 40 x 40 x 0.7mm ceramic board DC Pulse SOT-89 PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit - 40V - 32V -5 -1 - 2.5 (note 1) 0.6 2 (note 2) +150 - 55 to +150 Unit V V V A W o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = - 50uA, IE = 0 IC = - 1mA, IB = 0 IE = - 50uA, IC = 0 VCB = - 20V, IE = 0 VEB = - 4V, IC = 0 IC / IB = - 500mA / - 50mA VCE = - 3V, IC = - 0.1A VCE = - 5V, IC = - 50mA, f = 100MHz VCB = - 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Co...