TS13003MV

TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 800V 1.5A 0.8V @ IC / IB = 1A / 0.25A Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. TS13003MVCT B0 TS13003MVCT A3 TS13003MVCT B0G TS13003MVCT A3G Package TO-92 TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo 1Kpcs / Bulk 2Kpcs / Ammo Note: “G” is denote Halogen Free Product. Block Diagram Absolute Maximum Rating (Ta = 25ºC unless otherwise noted) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse VCBO VCES VCEO VEBO IC Total Power Dissipation Tc=25ºC Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Resistance Junction to Case PD TJ TSTG RθJC Limit 800 800 400 9 1.5 3 5.8 +150 - 55 to +150 21.5 Unit V V V V A W ºC ºC ºC/W 1/6 Version: G07 TS13003MV High Voltage NPN Transistor Electrical Specifications (Tc = 25ºC unless otherwise noted) Parameter Conditions Static Collector-Base Voltage IC = 1mA, IE = 0, t=300uS IC = 1mA, IE = 0, Tc=125ºC, t=2uS Collector-Emitter Sustaning Voltage IC = 1mA, IB = 0, t=300uS IC = 1mA, IB = 0, Tc=125ºC, t=2uS Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current Collector Cutoff Current Emitter Cutoff ...