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K4S641632H-UCL75 Dataheets PDF



Part Number K4S641632H-UCL75
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 64Mb H-die SDRAM Specification 54 TSOP-II
Datasheet K4S641632H-UCL75 DatasheetK4S641632H-UCL75 Datasheet (PDF)

SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 1.0 (September, 2003) • Finalized CMOS SDRAM Revision 1.1 (October, 2003) Deleted speed -7C and AC parameter notes 5. Revision 1.2 (May, 2004) • Added Note 5. sentense of tRDL param.

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SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 1.0 (September, 2003) • Finalized CMOS SDRAM Revision 1.1 (October, 2003) Deleted speed -7C and AC parameter notes 5. Revision 1.2 (May, 2004) • Added Note 5. sentense of tRDL parameter Revision 1.3 (August, 2004) • Corrected typo. Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (4K cycle) • Pb-free Package • RoHS compliant GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S640432H-UC(L)75 K4S640832H-UC(L)75 K4S641632H-UC(L)60 K4S641632H-UC(L)70 K4S641632H-UC(L)75 4Mb x 16 Orgainization 16Mb x 4 8Mb x 8 Max Freq. 133MHz(CL=3) 133MHz(CL=3) 166MHz(CL=3) 143MHz(CL=3) 133MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package Organization 16Mx4 8Mx8 4Mx16 Row Address A0~A11 A0~A11 A0~A11 Column Address A0-A9 A0-A8 A0-A7 Row & Column address configuration Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) Package Physical Dimension CMOS SDRAM 0~8°C 0.25 TYP 0.010 #54 #28 0.45~0.75 0.018~0.030 0.05 MIN 0.002 ( 0.50 ) 0.020 11.76±0.20 0.463±0.008 #1 22.62 MAX 0.891 22.22 0.875 0.10 MAX 0.004 ( 0.71 ) 0.028 ± 0.10 ± 0.004 #27 0.21 0.008 ± 0.05 ± 0.002 1.00 0.039 ± 0.10 ± 0.004 0.30 -0.05 0.004 0.012 + -0.002 +0.10 0.80 0.0315 54Pin TSOP(II) Package Dimension 10.16 0.400 0.125+0.075 -0.035 0.005+0.003 -0.001 1.20 MAX 0.047 Rev. 1.3 August 2004 SDRAM 64Mb H-die (x4, x8, x16) FUNCTIONAL BLOCK DIAGRAM CMOS SDRAM I/O Control LWE LDQM Data Input Register Bank Select 4M x 4 / 2M x 8 / 1M x 16 Sense AMP 4M x 4 / 2M x 8 / 1M x 16 4M x 4 / 2M x 8 / 1M x 16 4M x 4 / 2M x 8 / 1M x 16 Refresh Counter Output Buffe.


K4S641632H-UC75 K4S641632H-UCL75 K4S640432H-UC75


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