MMBTSC2715

MMBTSC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 35 30 4 50 10 200 125 -55 to +125 Unit V V V mA mA mW O C C O Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 mA Current Gain Group R O Y Symbol hFE hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Cob Gpe Min. 40 70 120 100 27 Typ. 2 30 Max. 80 140 240 0.1 0.1 0.4 1 400 3.2 33 Unit µA µA V V MHz pF dB Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 1 mA Output Capacitance at VCB = 10 V, f = 1 MHz Power Gain at VCE = 6 V, -IE = 1 mA, f = 10.7 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 06/05/2006 MMBTSC2715 www.DataSheet4U.com 10 Ic[mA], COLLECTOR CURRENT I B =90 A I B =80 A h FE , DC CURRENT GAIN 1000 VCE=1...