MMBTSC2712

MMBTSC2712 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. www.DataSheet4U.com Features ․High voltage and high current: VCEO=50V, IC=150mA(max) ․High hFE: hFE=70~700 ․Low noise: NF=1dB(typ.), 10dB(max) ․Small package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 50 5 150 30 200 125 -55 to +125 Unit V V V mA mA mW O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC2712 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=2mA O Y G L Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=10V, IC=1mA Collector Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, Rg=10KΩ NF 1 Cob 2 fT 80 VCE(sat) IEBO ICBO hFE hFE hFE hFE 70 120 200 350 Min. Typ. www.DataSheet4U.com Max. 140 240 400 700 0.1 0.1 0.25 3.5 10 Unit µA µA V MHz pF dB SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Ho...