MMBTSC2413
NPN Silicon Epitaxial Planar Transistor
High frequency amplifier transistor.
www.DataSheet4U.com
SOT-23 Pla...
MMBTSC2413
NPN Silicon Epitaxial Planar
Transistor
High frequency amplifier
transistor.
www.DataSheet4U.com
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj Tstg
Value 40 25 5 50 200 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Collector Base Cutoff Current at VCB = 24 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 50 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 50 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Gain Bandwidth Product at VCE = 6 V, -IE = 1 mA, f = 100 MHz Output Capacitance at VCB = 6 V, f = 1 MHz
Symbol hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) fT Cob
Min. 82 40 25 5 100 -
Typ. 300 1.3
Max. 180 0.5 0.5 0.3 2.2
Unit µA µA V V V V MHz pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/04/2009
MMBTSC2413
www.DataSheet4U.com
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/04/2009
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