MMBTSB624

MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups A, B, C, D and E, according to its DC current gain. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 30 25 5 700 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA Symbol A B C D E hFE hFE hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(on) Cob fT Min. 110 135 170 200 250 50 30 25 5 0.6 - Typ. 17 160 Max. 180 220 270 320 400 100 100 0.6 0.7 - Unit nA nA V V V V V pF MHz at -VCE = 1 V, -IC = 700 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 700 mA, -IB = 70 mA Base Emitter On Voltage at -VCE = 6 V , -IC = 10 mA Output Capacitance at -VCB = 6 V, IE = 0, f = 1 MHz Transition Frequency at -VCE = 6 V, -IC = 10 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company ...