MMBTSB1689W
PNP Silicon Epitaxial Planar Transistors
for low frequency amplifier and driver applications
www.DataSheet4...
MMBTSB1689W
PNP Silicon Epitaxial Planar
Transistors
for low frequency amplifier and driver applications
www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1)
Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot TJ Ts
Value 15 12 6 1.5 3
1)
Unit V V V A A mW
O
200 150 -55 to +150
C C
O
Single pulse, Pw = 1 ms.
Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 200 mA Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE= 10 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 25 mA Collector Cutoff Current at -VCB = 15 V Emitter Cutoff Current at -VEB = 6 V Transition Frequency at -VCE = 2 V, IE = 200 mA, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCEsat -ICBO -IEBO fT Cob Min. 270 15 12 6 Typ. 400 12 Max. 680 0.2 100 100 Unit V V V V nA nA MHz pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/01/2006
MMBTSB1689W
www.DataSheet4U.com
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/01/2006
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