MMBTSA733

MMBTSA733 www.DataSheet4U.com PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 60 50 5 150 200 150 -55 to +150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSA733 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=6V, -IC=1mA Current Gain Group R O Y P L Collector Base Breakdown Voltage at -IC=100µA Collector Emitter Breakdown Voltage at -IC=10mA Emitter Base Breakdown Voltage at -IE=10µA Collector Cutoff Current at -VCB=60V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Base Emitter Voltage at -VCE=6V, -IC=1mA Gain Bandwidth Product at -VCE=6V, -IC=10mA Output Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=6V, -IC=0.3mA, f=100Hz, RS=10KΩ F 6 COB 2.8 fT 50 180 -VBE(on) 0.5 -VCE(sat) -IEBO -ICBO -V(BR)EBO 5 -V(BR)CEO 50 -V(BR)CBO 60 hFE hFE hFE hFE hFE 40 70 120 200 350 Min. Typ. www.DataSheet4U.com Max. Unit ...