DatasheetsPDF.com

T0605NH Dataheets PDF



Part Number T0605NH
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description (T0605xH / T0609xH) SENSITIVE GATE TRIACS
Datasheet T0605NH DatasheetT0605NH Datasheet (PDF)

www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The T06xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose applications where gate high sensitivity is required. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t V.

  T0605NH   T0605NH


Document
www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The T06xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose applications where gate high sensitivity is required. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/µs. IG = 50 mA Tc= 100 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Value 6 63 60 18 10 50 - 40, + 150 - 40, + 125 260 °C °C A2s A/µs Unit A A TO220 non-insulated (Plastic) I2t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125°C 400 Voltage M 600 S 700 N 800 Unit V 1/5 www.DataSheet4U.com T0605xH / T0609xH THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Junction to ambient Junction to case for D.C Junction to case for A.C 360 ° conduction angle (F=50Hz) Parameter Value 60 4 3 Unit °C/W °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ VD=VDRM IG = 40mA IT = 8.5A dIG/dt = 0.5A/µs IT= 50mA Gate open IG= 1.2 IGT Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Quadrant I-II-III-IV I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MIN TYP Sensitivity 05 5 1.5 0.2 2 09 10 mA V V µs Unit IGM = 4 A (tp = 20 µs) IH * IL Tj= 25°C Tj= 25°C I-III-IV II MAX TYP TYP MAX MAX MAX MIN TYP 5 5 10 1.65 5 2 10 10 20 mA mA VTM * IDRM IRRM dV/dt * ITM= 8.5A tp= 380µs VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 2.7 A/ms Tj= 25°C Tj= 25°C Tj= 110°C Tj= 110°C V µA mA 20 V/µs 10 1 2 V/µs (dV/dt)c * Tj= 110°C TYP * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION T TRIAC MESA GLASS CURRENT 2/5 06 09 SENSITIVITY M H PACKAGE : H = TO220 Non-insulated VOLTAGE ® www.DataSheet4U.com T0605xH / T0609xH Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 180 O P(W) 10 8 6 4 2 o Tcase (o C) Rth = 0 o C/W 2.5 o C/W 5 o C/W 10 o C/W = 180 = 120 = 90 o o 10 8 6 4 -95 -100 -105 -110 -115 = 60 = 30 o o 2 I T(RMS) (A) 0 0 1 2 3 4 5 6 -120 Tamb ( C) o 0 0 20 40 60 80 100 120 -125 140 Fig.3 : RMS on-state current versus case temperature. I T(RMS) (A) Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 7 6 Zt h( j-c) 5 4 3 2 1 0 0 Tcase( C) 10 20 30 40 50 60 70 80 90 100 110 120 130 o = 180 o 0.1 Zt h( j-a) tp (s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 60 Tj initial = 25 C o 50 40 30 Ih 20 10 Tj(oC) Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 100 0 3/5 ® www.DataSheet4U.com T0605xH / T0609xH Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Tj initial = 25o C Fig.8 : On-state characteristics (maximum values). 1000 I TM (A) 100 Tj initial o 25 C I TSM 100 Tj max I2t 10 Tj max Vto =0.93V Rt =0.078 10 1 1 t (ms) VTM (V) 10 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 4/5 ® www.DataSheet4U.com T0605xH / T0609xH PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A G I B C O P N1 N F D M L J H A B C D F G H I J L M N N1 O P Marking : type number Weight : 1.8 g 2.54 1.2 1.4 1.15 2.7 5.3 0.100 0.047 0.055 0.045 4.5 3.53 1.2 6.3 12.7 4.2 3.0 4.7 3.66 1.3 0.9 0.106 0.209 10.3 6.5 9.1 0.500 0.165 0.118 0.177 0.185 0.139 0.144 0.047 0.051 0.035 0.248 0.256 0.358 0.406 REF. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Micro.


T0609SH T0605NH T0609NH


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)