STL30NF3LL

www.DataSheet4U.com N-CHANNEL 30V - 0.008Ω - 30A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET TYPE STL30NF3LL s s s STL30NF3LL PRELIMINARY DATA VDSS 30 V RDS(on) < 0.010 Ω ID 30 A TYPICAL RDS(on) = 0.008Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance. PowerFLAT™(6x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(#) IDM (l) PTOT Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 16 30 19 120 80 0.64 – 55 to 150 Unit V V V A A A W W/°C °C (q) Pulse width limited by safe operating area (#) Limited by Wire Bonding November 2001 1/6 www.DataSheet4U.com STL30NF3LL THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 50 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS...