NTMS4503N

NTMS4503N Power MOSFET 28 V, 14 A, N−Channel, SO−8 Features www.DataSheet4U.com Low RDS(on) High Power and Current Handling Capability Low Gate Charge Applications V(BR)DSS 28 V http://onsemi.com RDS(on) TYP 7.0 mW @ 10 V 8.8 mW @ 4.5 V ID MAX (Note 1) 14 A DC/DC Converters Motor Drives Synchronous Rectifier − POL Buck Low−Side D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current Continuous @ Ta = 25°C (Note 1) Continuous @ Ta = 25°C (Note 2) Continuous @ Ta = 25°C (Note 3) Single Pulse (tp = 10 ms) Total Power Dissipation TA = 25°C (Note 1) TA = 25°C (Note 2) TA = 25°C (Note 3) Operating and Storage Temperature Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 V, VGS = 10 V, IL = 12.2 A, L = 1.0 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID 14 12 9.0 40 W 2.5 1.66 0.93 TJ, Tstg EAS −55 to 150 75 °C mJ 8 Value 28 $20 Unit V V A S G IDM PD MARKING DIAGRAM/ PIN ASSIGNMENT 1 1 8 Drain Drain Drain Drain 4503N ALYW SO−8 CASE 751 STYLE 12 4503N A L Y W Source Source Source Gate (Top View) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week TL 260 °C THERMAL RESISTANCE RATINGS Rating Thermal Resistance Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Junction−to−Ambient (Note 3) Symbol RqJA Value 50 75 135 Unit °C/W ORDERING INFORMATION Device N...