BULT116D

www.DataSheet4U.com ® BULT116D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA s s s s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: COMPACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A.C. MAINS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS s 3 2 1 SOT-32 DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 400 200 9 5 10 2 4 45 -65 to 150 150 Unit V V V A A A A W o o C C February 2003 1/6 www.DataSheet4U.com BULT116D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.78 80 o o C/W C/W ELECTRICAL CHARACTERISTICS ...