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STPSC806

ST Microelectronics

Schottky Barrier 600 V power Schottky silicon carbide diode


Description
www.DataSheet4U.com STPSC806 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wi...



ST Microelectronics

STPSC806

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