Schottky Barrier 600 V power Schottky silicon carbide diode
Description
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STPSC806
600 V power Schottky silicon carbide diode
Features
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No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function
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Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wi...