SFT1302

Ordering number : ENA1178 SFT1302 www.DataSheet4U.com SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SFT1302 Features General-Purpose Switching Device Applications Motor drive application. Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --35 ±20 --11 --44 1.0 15 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=-1mA, VGS=0V VDS=-35V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=-1mA VDS=-10V, ID=-5.5A Ratings min --35 --1 ±10 --1.2 5.2 8.7 --2.6 typ max Unit V μA μA V S Marking : T1302 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nucl...