2SK3485

Ordering number : ENN7180 2SK3485 N-Channel Silicon MOSFET www.DataSheet4U.com 2SK3485 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2062A [2SK3485] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings 20 ± 10 2.5 10 1.0 3.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=± 8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.3A ID=1.3A, VGS=4V ID=0.7A, VGS=2.5V Ratings min 20 1 ± 10 0.4 2.8 4.0 110 140 140 195 1.3 typ max Unit V µA µA V S mΩ mΩ Marking : LB Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability,...