Power Transistors
2SC5622
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5 φ 3.2±0.1...
Power
Transistors
2SC5622
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3 5˚
5˚
(4.5)
(23.4) 22.0±0.5
26.5±0.5 (2.0)
(1.2) (10.0)
I Features
High breakdown voltage: 1 500 V
High-speed switching
Wide area of safe operation (ASO)
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
/ Collector to base voltage
VCBO
1 500
V
18.6±0.5 (2.0)
Solder Dip
5.45±0.3
10.9±0.5
5.5±0.3
3.3±0.3
(2.0)
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Diode forward voltage
VF
IF = 4 A
−2
V
Storage time
tstg
IC = 4 A, Resistance loaded
5.0
...
