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STSJ80N4LLF3
N-channel 40V - 0.0042Ω - 18A - PowerSO-8™ STripFET™III Power MOSFET for DC-DC conversion
General features
Type STSJ80N4LLF3 VDSS 40V RDS(on) 0.005Ω ID 18A(1)
1. This value is rated according to Rthj-pcb ■ ■ ■ ■
Optimal RDS(on) x Qg trade-off @ 4.5V Switching losses reduced Low threshold device Improved junction-case thermal resistance
PowerSO-8
Description
This series of product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability.
Internal schematic diagram
Applications
■
Switching application
DRAIN CONTACT ALSO ON THE BACKSIDE
Order codes
Part number STSJ80N4LLF3 Marking 80N4LLPackage PowerSO-8 Packaging Tape & reel
November 2006
Rev 3
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Contents
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STSJ80N4LLF3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STSJ80N4LLF3
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Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS VGS
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Total dissipation at TC = 25°C Maximum operating junction temperature Storage temperature Value 40 ± 16 ±18 80 18 50 72 70 3 -55 to 150 Unit V V V A A A A W W °C
ID (2) ID ID
(3) (2) (4)
IDM
Ptot(2) Ptot(3) Tj Tstg
1. Guaranteed for test time < 15ms 2. This value is rated according to Rthj-c 3. This value is rated according to Rthj-pcb 4. Pulse with limited by safe operating area
Table 2.
Symbol Rthj-c Rthj-pcb
(1)
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Value 1.8 42 Unit °C/W °C/W
1. When mounted on 1 inch² FR-4 board, 2oz Cu (t<10sec.)
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Electrical characteristics
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STSJ80N4LLF3
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250µA, VGS = 0 VDS = 40V, TC = 25°C VDS = 40V, TC = 125°C VGS = ± 16V VDS = VGS, ID = 250µA VGS = 10V, ID = 9A VGS = 4.5V, ID = 9A 1 0.0042 0.005 0.005 0.007 Min. 40 10 100 ±200 Typ. Max. Unit V µA µA nA V Ω Ω
Table 4.
Symbol Ciss Coss Crss Qg Qgs Qgd RG
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 2530 574 29 21.5 6.9 8.2 1 3 28 Max. Unit pF pF pF
VDS = 25V, f = 1MHz, VGS = 0 VDD = 20V, ID = 18A VGS = 4.5V (see Figure 13) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain
nC nC nC Ω
Gate input resistance
5
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STSJ80N4LLF3
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Table 5.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 20V, ID = 9A RG = 4.7Ω , VGS = 10V (see Figure 15) VDD = 20V, ID = 9A RG = 4.7Ω , VGS = 10V (see Figure 15) Min. Typ. 17 25 62 9 Max. Unit ns ns ns ns
Table 6.
Symbol ISD ISDM VSD(1) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18A , VGS = 0 ISD = 18A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see Figure 14) 43 64 3 Test conditions Min. Typ. Max. 18 72 1.2 Unit A A V ns nC A
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
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Electrical characteristics
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STSJ80N4LLF3
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Normalized BVDSS vs temperature
Figure 6.
Static drain-source on resistance
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STSJ80N4LLF3 Figure 7. Gate charge vs gate-source voltage Figure 8.
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Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature.