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STSJ80N4LLF3 Dataheets PDF



Part Number STSJ80N4LLF3
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STSJ80N4LLF3 DatasheetSTSJ80N4LLF3 Datasheet (PDF)

www.DataSheet4U.com STSJ80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8™ STripFET™III Power MOSFET for DC-DC conversion General features Type STSJ80N4LLF3 VDSS 40V RDS(on) 0.005Ω ID 18A(1) 1. This value is rated according to Rthj-pcb ■ ■ ■ ■ Optimal RDS(on) x Qg trade-off @ 4.5V Switching losses reduced Low threshold device Improved junction-case thermal resistance PowerSO-8 Description This series of product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technolo.

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www.DataSheet4U.com STSJ80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8™ STripFET™III Power MOSFET for DC-DC conversion General features Type STSJ80N4LLF3 VDSS 40V RDS(on) 0.005Ω ID 18A(1) 1. This value is rated according to Rthj-pcb ■ ■ ■ ■ Optimal RDS(on) x Qg trade-off @ 4.5V Switching losses reduced Low threshold device Improved junction-case thermal resistance PowerSO-8 Description This series of product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability. Internal schematic diagram Applications ■ Switching application DRAIN CONTACT ALSO ON THE BACKSIDE Order codes Part number STSJ80N4LLF3 Marking 80N4LLPackage PowerSO-8 Packaging Tape & reel November 2006 Rev 3 1/12 www.st.com 12 Contents www.DataSheet4U.com STSJ80N4LLF3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STSJ80N4LLF3 www.DataSheet4U.com Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS VGS (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Total dissipation at TC = 25°C Maximum operating junction temperature Storage temperature Value 40 ± 16 ±18 80 18 50 72 70 3 -55 to 150 Unit V V V A A A A W W °C ID (2) ID ID (3) (2) (4) IDM Ptot(2) Ptot(3) Tj Tstg 1. Guaranteed for test time < 15ms 2. This value is rated according to Rthj-c 3. This value is rated according to Rthj-pcb 4. Pulse with limited by safe operating area Table 2. Symbol Rthj-c Rthj-pcb (1) Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Value 1.8 42 Unit °C/W °C/W 1. When mounted on 1 inch² FR-4 board, 2oz Cu (t<10sec.) 3/12 Electrical characteristics www.DataSheet4U.com STSJ80N4LLF3 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250µA, VGS = 0 VDS = 40V, TC = 25°C VDS = 40V, TC = 125°C VGS = ± 16V VDS = VGS, ID = 250µA VGS = 10V, ID = 9A VGS = 4.5V, ID = 9A 1 0.0042 0.005 0.005 0.007 Min. 40 10 100 ±200 Typ. Max. Unit V µA µA nA V Ω Ω Table 4. Symbol Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 2530 574 29 21.5 6.9 8.2 1 3 28 Max. Unit pF pF pF VDS = 25V, f = 1MHz, VGS = 0 VDD = 20V, ID = 18A VGS = 4.5V (see Figure 13) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain nC nC nC Ω Gate input resistance 5 4/12 STSJ80N4LLF3 www.DataSheet4U.com Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 20V, ID = 9A RG = 4.7Ω , VGS = 10V (see Figure 15) VDD = 20V, ID = 9A RG = 4.7Ω , VGS = 10V (see Figure 15) Min. Typ. 17 25 62 9 Max. Unit ns ns ns ns Table 6. Symbol ISD ISDM VSD(1) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18A , VGS = 0 ISD = 18A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see Figure 14) 43 64 3 Test conditions Min. Typ. Max. 18 72 1.2 Unit A A V ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 Electrical characteristics www.DataSheet4U.com STSJ80N4LLF3 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/12 STSJ80N4LLF3 Figure 7. Gate charge vs gate-source voltage Figure 8. www.DataSheet4U.com Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature.


DO5040H STSJ80N4LLF3 C5622


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