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TIM5964-4UL Dataheets PDF



Part Number TIM5964-4UL
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Datasheet TIM5964-4UL DatasheetTIM5964-4UL Datasheet (PDF)

FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 36.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 ∆G VDS= 10V IDSset= 0.9A f = 5.9 to 6.4GHz UNIT dBm dB A dB Power Added Efficiency ηa.

  TIM5964-4UL   TIM5964-4UL


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