MICROWAVE POWER GaAs FET
TIM5964-45SL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 46.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN
G1dB= 9.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at...
