2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET
September 2016
2N7000BU / 2N7000TA Advanced Small-Signal MOSFET
Fe...
2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET
September 2016
2N7000BU / 2N7000TA Advanced Small-Signal MOSFET
Features
Fast Switching Times Improved Inductive Ruggedness Lower Input Capacitance Extended Safe Operating Area Improved High-Temperature Reliability
Description
These N-channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
1 TO-92 1. Source 2. Gate 3. Drain
Ordering Information
Part Number 2N7000BU 2N7000TA
Marking 2N7000 2N7000
Package TO-92 3L TO-92 3L
Packing Method Bulk Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol VDSS
ID
IDM VGS TJ, TSTG
TL
Parameter Dr...