TPCP8901

TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Switching Applications 0.33±0.05 0.05 M A 8 5 Unit: mm Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation : PNP VCE (sat) = −0.20 V (max) : NPN VCE (sat) = 0.17 V (max) High-speed switching : PNP tf = 70 ns (typ.) : NPN tf = 85 ns (typ.) 0.475 1 4 0.65 2.9±0.1 S 0.025 S 0.17±0.02 B 0.05 M B A 0.8±0.05 0.28 +0.1 -0.11 2.4±0.1 2.8±0.1 Absolute Maximum Ratings (Ta = 25°C) 1.12+-00..1132 Characteristics Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC (Note 1) Pulse (Note 1 ) Base current VCBO VCEO VEBO IC ICP IB Rating Unit PNP NPN −50 100 V −50 50 V −7 7 V −0.8 1.0 A −5.0 5.0 −100 100 mA 1.12+-00..1132 1.Emitter1 2.Base1 3.Emitter2 4.Base2 5.Collector2 6.Collector2 7.Collector1 8.Collector1 0.28 +0.1 -0.11 JEDEC ― JEITA ― TOSHIBA 2-3V1C Weight: 0.017 g (typ.) Single-device operation 1.48 Collector power dissipation (t = 10s) Single-device PC (Note 2) W value at dual 0.80 operation Single-device operation 0.83 Collector power dissipation (DC) Single-device PC (Note 2) W value at dual 0.48 operation Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C Note 1: Please use devices on condition...