TPCP8901
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
TPCP8901
Portable Equipment Applications Swi...
TPCP8901
TOSHIBA
Transistor Silicon
NPN /
PNP Epitaxial Type (PCT Process)
TPCP8901
Portable Equipment Applications Switching Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
Small footprint due to small and thin package High DC current gain :
PNP hFE = 200 to 500 (IC = −0.1 A)
:
NPN hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation :
PNP VCE (sat) = −0.20 V (max)
:
NPN VCE (sat) = 0.17 V (max) High-speed switching :
PNP tf = 70 ns (typ.)
:
NPN tf = 85 ns (typ.)
0.475
1
4
0.65
2.9±0.1
S
0.025 S 0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1 -0.11
2.4±0.1 2.8±0.1
Absolute Maximum Ratings (Ta = 25°C)
1.12+-00..1132
Characteristics
Symbol
Collector-base voltage Collector-emitter voltage
Emitter-base voltage
Collector current
DC (Note 1) Pulse (Note 1 )
Base current
VCBO VCEO VEBO
IC ICP IB
Rating Unit
PNP NPN
−50 100
V
−50 50
V
−7
7
V
−0.8 1.0 A
−5.0 5.0
−100 100
mA
1.12+-00..1132
1.Emitter1 2.Base1 3.Emitter2 4.Base2
5.Collector2 6.Collector2 7.Collector1 8.Collector1
0.28
+0.1 -0.11
JEDEC
―
JEITA
―
TOSHIBA
2-3V1C
Weight: 0.017 g (typ.)
Single-device operation
1.48
Collector power dissipation (t = 10s) Single-device
PC (Note 2)
W
value at dual
0.80
operation
Single-device operation
0.83
Collector power dissipation (DC)
Single-device
PC (Note 2)
W
value at dual
0.48
operation
Junction temperature Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: Please use devices on condition...