TPCP8601

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 TPCP8601 High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 2.8±0.1 High DC current gain: hFE = 200 to 500 (IC = −0.6 A) Low collector-emitter saturation: VCE (sat) = −0.19 V (max) High-speed switching: tf = 35 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) 0.475 1 4 0.65 2.9±0.1 S 0.025 S 0.17±0.02 B 0.05 M B A 0.8±0.05 0.28 +0.1 -0.11 Characteristic Symbol Rating Unit 1.12+-00..1132 Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −7 V DC (Note 1) IC Collector current Pulse (Note 1 ) ICP −4.0 A −7.0 1.12+-00..1132 1.Collector 2.Collector 3.Collector 4.Base 5.Emitter 6.Collector 7.Collector 8.Collector 0.28 +0.1 -0.11 JEDEC ― Base current IB −0.5 A Collector power dissipation (t = 10s) t = 10s DC Pc (Note 2) 3.3 1.3 W JEITA TOSHIBA ― 2-3V1A Weight: 0.017 g (typ.) Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device. Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Figure 1. Circuit Configuration (Top View) 8　 7 　6 　 5 Note 3: ● on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, ...