TPCP8301

TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ ) www.DataSheet4U.com TPCP8301 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement model: Vth = −0.5 to −1.2V (VDS = −10 V, ID = −200 μA) Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating −20 −20 ±12 −5 −20 1.48 1.23 W 0.58 0.36 6.5 −5 0.12 150 −55 to 150 mJ A mJ °C °C Unit V V V A S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 Single-device operation Drain power (Note 3a) dissipation Single-device value at (t = 5 s) (Note 2a) dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation Single-device value at (t = 5 s) (Note 2b) dual operation (Note 3b) Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 4) 1. Source1 2. Gate1 3. Sourc...