JDH3D01FV
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01FV
○ For wave detection
¾ Small package
0.22±0.05 1.2±0.05 0.32±0.05 3 0.13±0.05 1. ANODE1 2. CATHODE2 3. CATHODE1/ANODE2 0.8±0.05
Unit: mm
1.2±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbo...
