PNP EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/03/25 www.DataSheet4U.com REVISED DATE :
G L A9 4
Description Features
P N P E P I TA X I A L P L A ...
Description
ISSUED DATE :2005/03/25 www.DataSheet4U.com REVISED DATE :
G L A9 4
Description Features
P N P E P I TA X I A L P L A N A R T R A N S I S T O R
The GLA94 is designed for application requires high voltage. High voltage: VCEO=400V (min) at IC=1mA High current gain: IC=300mA at 25 Complementary with GLA44
Package Dimensions
SOT-223
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total Power Dissipation Symbol Ratings Unit
Tj TsTG VCBO VCEO VEBO IC PD )
Unit V V V nA nA nA mV mV mV mV
+150 -55 ~ +150 -400 -400 -6 -500 2
V V V mA W
Electrical Characteristics(Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) *hFE1 *hFE2 *hFE3 *hFE4 Min. -400 -400 -6 40 50 45 40 Typ. -
Max.
Test Conditions IC=-100Ua, IE=0 IC=-1mA, IB=0 IE=-100uA, IC =0 VCB=-400V, IE=0 VCE=-400V, VBE=0 VEB=-6V, IC =0 IC=-1mA, IB=-0.1mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA VCE=-10V, IC =-1mA VCE=-10V, IC =-10mA VCE=-10V, IC =-50mA VCE=-10V, IC =-100mA * Pulse Test: Pulse Width 380 s, Duty Cycle 2%
-100 -500 -100 -350 -500 -750 -750 300 -
GMA94
1/2
ISSUED DATE :2005/03/25 www.DataSheet4U.com REVISED DATE...
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